Gate drive flexibility: 4.5 V or 10 V
The drive voltage range spans 4.5 V to 10 V for achieving the rated Rds(on). This means a 5 V logic-level gate drive from an MCU or a dedicated gate driver can fully enhance the channel, while a traditional 10 V drive delivers the lowest on-resistance. The maximum gate-source voltage is ±20 V, so a 12 V rail with a series resistor is also safe.
Switching losses and gate charge budget
Total gate charge is 14.3 nC at 10 V. For a 100 kHz switching frequency, the average gate drive current is 1.43 mA — well within the capability of a standard gate driver IC. Input capacitance is 329 pF at 25 V drain-source, which keeps the Miller plateau short and limits cross-conduction losses during hard switching.
Thermal limits and package reality
Maximum power dissipation is 1.8 W at 25°C ambient in the PG-SOT223-4 package. The SOT223 footprint has a large drain tab — the PCB copper area under the tab directly sets the thermal resistance; a 1-inch-square copper pad on a 2-layer board is typical for 1.8 W dissipation.
Lifecycle and compliance
ROHS3 compliant, which covers the latest EU exemption updates.