400 V N-channel in a SOT-223 — what it fits
The Infineon BSP324H6327XTSA1 is a 400 V N-channel SIPMOS MOSFET in a PG-SOT223-4 surface-mount package. The 400 V drain-source voltage suits offline auxiliary supplies, flyback clamp circuits, and high-voltage DC-DC converters where the current is modest.
On-resistance and gate drive — the thermal trade-off
With 25 Ohm Rds(on) at 10 V gate drive, conduction loss at 170 mA is about 0.72 W — the 1.8 W package dissipation limit (Ta) leaves some headroom, but the junction will run hot in still air. The gate threshold voltage is 2.3 V max at 94 µA drain current, so a 3.3 V logic-level gate drive will turn it on, but the Rds(on) is specified at 4.5 V and 10 V drive — expect higher on-resistance if driven below 4.5 V.
The 150°C TJ max is the absolute limit; derate power dissipation above 25°C ambient per the datasheet curve.
ROHS3 compliant.
