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Infineon Technologies BSP322PH6327XTSA1
Infineon Technologies

Infineon BSP322PH6327XTSA1 P-Channel MOSFET

MPNBSP322PH6327XTSA1
End of Life

Infineon SIPMOS P-Channel MOSFET, 100V drain-source, 1A continuous drain, 800mOhm Rds(on) at 10V, PG-SOT223-4 surface-mount package, -55°C to 150°C junction temperature.

$0.94Ref. price · indicative, final on quote
BSP322PH6327XTSA1 datasheet
PackagingTO-261-4, TO-261AA
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
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Specifications

BSP322PH6327XTSA1 Technical Specifications
ParameterValue
SeriesSIPMOS®
FET typeP-Channel
Mounting typeSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C1A (Tc)
Power dissipation1.8W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-261-4, TO-261AA
Vgs(th) (Max) @ id1V @ 380µA
Rds on (Max) @ id, vgs800mOhm @ 1A, 10V
Gate charge (Qg) (Max) @ vgs16.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds372 pF @ 25 V

Product details

100 V P-channel in a SOT223-4 — what the scorch mark tells you

The BSP322PH6327XTSA1 comes in a PG-SOT223-4 surface-mount package — the exposed tab is the drain, so the PCB copper pour under the part is the primary heatsink.

800 mOhm on-resistance — the voltage-drop check

Rds(on) is specified at 800 mOhm maximum at 1 A drain current with 10 V gate drive. That is high enough that a repair tech can confirm the part is turned on by measuring the voltage drop across drain-source — at 1 A load you will see about 800 mV drop.

Temperature range and junction budget

The maximum power dissipation is 1.8 W at 25°C ambient — derate above that per the datasheet's thermal resistance curve. The gate charge is 16.5 nC at 10 V, so a small-signal driver or even a GPIO pin can switch it at moderate frequencies without a dedicated gate-driver IC.

Frequently asked questions

What is the Rds(on) of BSP322PH6327XTSA1?

The maximum on-resistance is 800 mOhm at 1 A drain current with 10 V gate drive. At lower gate voltages (4.5 V) the Rds(on) will be higher — the datasheet provides the typical curve.

Is BSP322PH6327XTSA1 compatible with the SOT223-4 footprint?

Yes, the supplier device package is PG-SOT223-4, which matches the standard SOT223-4 footprint. The exposed tab is the drain connection — the PCB layout should include a copper pour under the part for thermal dissipation.