Infineon SIPMOS N-Channel MOSFET, 60 V drain-source, 2.9 A continuous drain, 120 mOhm on-resistance at 10 V gate drive, PG-SOT223-4 surface-mount package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | SIPMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 2.9A (Tj) |
| Power dissipation | 1.8W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-261-4, TO-261AA |
| Vgs(th) (Max) @ id | 4V @ 20µA |
| Rds on (Max) @ id, vgs | 120mOhm @ 2.9A, 10V |
| Gate charge (Qg) (Max) @ vgs | 12 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 340 pF @ 25 V |
The Infineon BSP320SH6327XTSA1 is a SIPMOS N-channel enhancement-mode MOSFET rated for 60 V drain-source breakdown and 2.9 A continuous drain current at 25°C junction temperature. It comes in a PG-SOT223-4 surface-mount package, a standard four-pin footprint that mates with the SOT223-4 land pattern.
It is ROHS3 compliant.
Within the Infineon SIPMOS family, there are other 60 V N-channel MOSFETs in SOT223-4 with different Rds(on) and current ratings. The BSP320SH6327XTSA1 is the 2.9 A, 120 mOhm variant. A direct pin-compatible alternative would need the same PG-SOT223-4 footprint and gate drive voltage; check the SIPMOS selection guide for a part with matching or lower Rds(on) if the application requires lower conduction loss.