60 V, 2.9 A N-channel MOSFET in SOT223-4
The Infineon BSP320SH6327XTSA1 is a SIPMOS N-channel enhancement-mode MOSFET rated for 60 V drain-source breakdown and 2.9 A continuous drain current at 25°C junction temperature. It comes in a PG-SOT223-4 surface-mount package, a standard four-pin footprint that mates with the SOT223-4 land pattern. The 120 mOhm maximum on-resistance at 2.9 A with 10 V gate drive sets the conduction loss baseline for thermal design. The -55°C to 150°C junction temperature range qualifies it for military, automotive under-hood, and industrial environments where wide thermal swings are expected.
Active production — no obsolescence risk
The BSP320SH6327XTSA1 carries an Active product status from Infineon. It is ROHS3 compliant.
