The Infineon BSP296NH6327XTSA1 is an N-channel enhancement-mode MOSFET from the OptiMOS™ family, rated for 100 V drain-source breakdown and 1.2 A continuous drain current at 25°C case temperature. It comes in a PG-SOT223-4 surface-mount package, which keeps the footprint small — about the size of a SOT-223 linear regulator — and fits well on dense mixed-signal boards where board area is tight. The 1.8 V typical threshold means this part can be turned on fully by a logic-level gate signal. Gate charge is only 6.7 nC max at 10 V, so the gate driver doesn't need to push much current. That keeps switching losses low in a 100 kHz to a few hundred kHz auxiliary supply or a load-switch application. Input capacitance is 152.7 pF at 25 V drain — a light load for the preceding stage.
Infineon BSP296NH6327XTSA1 N-Channel MOSFET, 100 V 1.2 A
MPNBSP296NH6327XTSA1
End of Life
Infineon OptiMOS™ N-Channel MOSFET, 100 Vdss, 1.2 A continuous, 600 mOhm Rds(on) at 10 V, PG-SOT223-4 surface mount, -55°C to 150°C.
$0.91Ref. price · indicative, final on quote
PackagingTO-261-4, TO-261AA
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 1.2A (Ta) |
| Power dissipation | 1.8W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-261-4, TO-261AA |
| Vgs(th) (Max) @ id | 1.8V @ 100µA |
| Rds on (Max) @ id, vgs | 600mOhm @ 1.2A, 10V |
| Gate charge (Qg) (Max) @ vgs | 6.7 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 152.7 pF @ 25 V |
Product details
Frequently asked questions
Is BSP296NH6327XTSA1 RoHS compliant?
Yes, it is ROHS3 compliant, meeting the latest EU restriction on hazardous substances.