100 V N-channel in a SOT-223 — what the ratings mean for the BOM
The Infineon BSP296NH6327XTSA1 is an N-channel enhancement-mode MOSFET from the OptiMOS™ family, rated for 100 V drain-source breakdown and 1.2 A continuous drain current at 25°C case temperature. It comes in a PG-SOT223-4 surface-mount package, which keeps the footprint small — about the size of a SOT-223 linear regulator — and fits well on dense mixed-signal boards where board area is tight. The 600 mOhm max on-resistance at 10 V gate drive is the headline number for conduction loss. The 1.8 V typical threshold means this part can be turned on fully by a logic-level gate signal. Gate charge is only 6.7 nC max at 10 V, so the gate driver doesn't need to push much current. That keeps switching losses low in a 100 kHz to a few hundred kHz auxiliary supply or a load-switch application. Input capacitance is 152.7 pF at 25 V drain — a light load for the preceding stage.
Lifecycle and compliance
It is ROHS3 compliant, meeting the latest EU restriction on hazardous substances — a gating requirement for equipment sold into Europe.