100 V N-channel in PG-SOT223 — small-signal switching
The Infineon BSP296L6433 is a SIPMOS N-channel MOSFET rated for 100 V drain-source with a continuous drain current of 1.1 A at 25 °C. It comes in a PG-SOT223 surface-mount package, a common footprint for small-signal power switches on mixed-signal boards.
Gate drive and switching — 4.5 V logic compatible
The BSP296L6433 specifies drive voltage for both maximum and minimum Rds(on) at 4.5 V and 10 V, meaning a 5 V logic output or a 3.3 V GPIO buffered through a level shifter can fully enhance the channel. The 1.8 V typical gate threshold at 400 µA confirms low-voltage turn-on capability. Gate charge totals 17.2 nC at 10 V, and input capacitance is 364 pF at 25 V drain. A 5 V gate driver with a 10 Ω series resistor delivers a clean switching edge with minimal ringing — the low Qg keeps the drive current under 10 mA at switching frequencies up to 500 kHz.
Temperature range and power dissipation
Maximum power dissipation is 1.79 W at 25 °C ambient, derated by the junction-to-ambient thermal resistance of the PG-SOT223 pad on a standard FR-4 board.
