What this SIPMOS N-channel MOSFET is and where it fits
The Infineon BSP295L6327 is a small-signal N-channel enhancement-mode MOSFET from the SIPMOS® family, built on a metal-oxide semiconductor process. It handles a 60 V drain-source voltage and delivers 1.8 A continuous drain current at 25 °C case temperature. The 300 mOhm on-resistance at 10 V gate drive keeps conduction losses manageable for a SOT223 footprint, and the -55 to 150 °C junction temperature range qualifies it for military-temperature environments such as avionics power stages, satellite secondary-side converters, and downhole instrumentation supplies.
60 V drain-source — what it means for the rail
The 60 V Vdss rating sets the maximum bus voltage this FET can block in the off state.
Gate drive and switching characteristics
The BSP295L6327 specifies a drive voltage range of 4.5 V to 10 V for achieving the rated on-resistance. The 17 nC gate charge at 10 V is modest.
Lifecycle and sourcing posture
Infineon lists the BSP295L6327 as Active and ROHS3 compliant. There is no last-time-buy notice or NRND flag. The part can be specified into new designs without an obsolescence risk. For current pricing and availability, submit an RFQ — the independent distribution channel sources this part and confirms lead time and price at quote time.