The Infineon BSP295L6327 is a small-signal N-channel enhancement-mode MOSFET from the SIPMOS® family, built on a metal-oxide semiconductor process. The 300 mOhm on-resistance at 10 V gate drive keeps conduction losses manageable for a SOT223 footprint, and the -55 to 150 °C junction temperature range qualifies it for military-temperature environments such as avionics power stages, satellite secondary-side converters, and downhole instrumentation supplies.
The 60 V Vdss rating sets the maximum bus voltage this FET can block in the off state.
Gate drive and switching characteristics
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