60 V, 1.8 A N-channel MOSFET in SOT223-4
The Infineon BSP295H6327XTSA1 is a 60 V, 1.8 A N-channel enhancement-mode MOSFET from the SIPMOS® series, housed in a PG-SOT223-4 surface-mount package. It is designed for low-power switching and load-management duties in industrial, automotive, and telecom environments where board space is tight and the junction temperature can reach 150°C. The 300 mOhm maximum on-resistance at 10 V gate drive keeps conduction losses manageable for a device this size; the 1.8 A continuous drain current is the practical load ceiling when the part is soldered to a standard footprint.
Gate drive and switching profile
The gate threshold voltage is 1.8 V maximum at 400 µA drain current. The recommended drive voltage for minimum on-resistance is 10 V, but the part is characterised at both 4.5 V and 10 V. Total gate charge is 17 nC at 10 V, and input capacitance is 368 pF at 25 V drain-source. The ±20 V maximum gate-source rating gives headroom for unregulated gate-drive rails.
Package, mounting, and thermal reality
The PG-SOT223-4 footprint is a four-lead surface-mount package with a large tab for heat transfer to the PCB copper. Maximum power dissipation is 1.8 W at 25°C ambient, derated to zero at 150°C junction. For continuous loads near 1.8 A, a reasonable copper area on the drain tab is required to keep the junction below the thermal limit.
Lifecycle and compliance
The BSP295H6327XTSA1 carries an Active lifecycle status, meaning Infineon continues to manufacture it with no announced last-time-buy or end-of-life. The part is ROHS3 compliant, so it passes the material-restriction requirements for EU and most global markets.