60 V, 1.8 A N-channel MOSFET in SOT223-4
The Infineon BSP295H6327XTSA1 is a 60 V, 1.8 A N-channel enhancement-mode MOSFET from the SIPMOS® series, housed in a PG-SOT223-4 surface-mount package.
The gate threshold voltage is 1.8 V maximum at 400 µA drain current. The recommended drive voltage for minimum on-resistance is 10 V, but the part is characterised at both 4.5 V and 10 V.
Package, mounting, and thermal reality
The PG-SOT223-4 footprint is a four-lead surface-mount package with a large tab for heat transfer to the PCB copper. Maximum power dissipation is 1.8 W at 25°C ambient, derated to zero at 150°C junction.