Infineon SIPMOS® series, N-Channel Depletion Mode MOSFET, 240V Vdss, 6Ohm Rds(on) at 350mA, 10V, PG-SOT223-4 surface mount, -55°C to 150°C.
| Parameter | Value |
|---|---|
| Series | SIPMOS® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 240 V |
| Drive voltage (Max rds on, min rds on) | 0V, 10V |
| Current - continuous drain (Id) @ 25°C | 350mA (Ta) |
| Power dissipation | 1.8W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET feature | Depletion Mode |
| Case | TO-261-4, TO-261AA |
| Vgs(th) (Max) @ id | 1V @ 108µA |
| Rds on (Max) @ id, vgs | 6Ohm @ 350mA, 10V |
| Gate charge (Qg) (Max) @ vgs | 5.7 nC @ 5 V |
| Input capacitance (Ciss) (Max) @ vds | 108 pF @ 25 V |
The Infineon BSP129L6906 is an N-channel depletion-mode power MOSFET from the SIPMOS® family. Unlike the more common enhancement-mode FET, this part conducts with zero gate-source voltage and requires a negative Vgs to turn off. That makes it a natural choice for normally-on current sources, cascode stages, or start-up circuits where you need conduction until the controller takes over.
The 6 Ω maximum on-resistance is specified at 350 mA drain current with 10 V on the gate.
Typical gate charge is 5.7 nC at 5 V gate-source voltage.