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Infineon Technologies BSP129L6327
Infineon Technologies

Infineon BSP129L6327 SIPMOS N-Ch Depletion MOSFET, 240V

MPNBSP129L6327
End of Life

Infineon SIPMOS® N-Channel Depletion Mode MOSFET, BSP129L6327, 240 Vds, 350 mA, 6 Ohm Rds(on) at 10 V, PG-SOT223-4-21 surface mount, -55 to 150 °C.

$0.27Ref. price · indicative, final on quote
BSP129L6327 datasheet
PackagingTO-261-4, TO-261AA
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BSP129L6327 Technical Specifications
ParameterValue
SeriesSIPMOS®
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage240 V
Drive voltage (Max rds on, min rds on)0V, 10V
Current - continuous drain (Id) @ 25°C350mA (Ta)
Power dissipation1.8W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
FET featureDepletion Mode
CaseTO-261-4, TO-261AA
Vgs(th) (Max) @ id1V @ 108µA
Rds on (Max) @ id, vgs6Ohm @ 350mA, 10V
Gate charge (Qg) (Max) @ vgs5.7 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds108 pF @ 25 V

Product details

Depletion-mode 240 V MOSFET in a SOT223 footprint

The Infineon BSP129L6327 is a SIPMOS® N-channel depletion-mode MOSFET rated for 240 V drain-to-source and 350 mA continuous drain current at 25 °C. Depletion-mode means the device is normally on at zero gate voltage — it conducts until a negative Vgs pinches it off. That makes it the natural choice for normally-on switch applications, current-source biasing, linear regulator pass elements, and cascode stages where an enhancement-mode part would fail to start up. The 6 Ohm maximum on-resistance at 350 mA and 10 V drive keeps conduction losses manageable in low-to-moderate current paths.

Package and mounting

Housed in a PG-SOT223-4-21 surface-mount package (TO-261-4 equivalent). The four-pin SOT223 footprint is common for medium-power discretes; the large tab provides the drain connection and a primary thermal path to the board copper.

Gate drive and switching characteristics

Gate threshold voltage is 1 V maximum at 108 µA drain current — typical for a depletion-mode device. Maximum gate-to-source voltage is ±20 V, giving good noise margin on the drive line. Gate charge is 5.7 nC at 5 V, and input capacitance is 108 pF at 25 V drain bias. These low values mean the gate driver sees a light capacitive load, so switching losses stay low even with modest drive current. The drive voltage range for rated Rds(on) is 0 V to 10 V, reflecting the depletion-mode characteristic: at Vgs = 0 V the channel is fully enhanced.

Sourcing and lifecycle

ROHS3 compliant. For a BOM line that needs a 240 V depletion-mode N-channel in a SOT223, this is the direct Infineon ordering code.

Frequently asked questions

Can BSP129L6327 be used in high-voltage applications?

Yes, the drain-to-source voltage rating is 240 V, making it suitable for high-voltage DC rails up to that level in applications like off-line auxiliary supplies, industrial converters, and cascode stages.