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Infineon Technologies BSP125L6433

Infineon BSP125L6433 N-Channel MOSFET, 600 V, 120 mA

MPNBSP125L6433
End of Life

Infineon SIPMOS N-Channel Power MOSFET, 600 V Vdss, 120 mA Id, 45 Ohm Rds(on) @ 10 V, SOT-223 surface mount, -55 to 150 °C junction temperature.

$0.31Ref. price · indicative, final on quote
PackagingTO-261-4, TO-261AA
RoHSROHS3 Compliant
SeriesSIPMOS®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BSP125L6433 specifications
ParameterValue
SeriesSIPMOS®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C120mA (Ta)
Power dissipation1.8W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-261-4, TO-261AA
Vgs(th) (Max) @ id2.3V @ 94µA
Rds on (Max) @ id, vgs45Ohm @ 120mA, 10V
Gate charge (Qg) (Max) @ vgs6.6 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds150 pF @ 25 V

Product details

The Infineon BSP125L6433 is a SIPMOS N-channel enhancement-mode power MOSFET rated for 600 V drain-source breakdown and 120 mA continuous drain current. It comes in a surface-mount SOT-223 package (PG-SOT223-4-21) and operates across a -55 to 150 °C junction temperature range. This is a small-signal high-voltage switch — think auxiliary supplies, bias rails, relay pre-drivers, and off-line start-up circuits where the load is under 120 mA and the bus voltage can hit 600 V.

The SIPMOS series is Infineon's established high-voltage MOSFET family; the part is widely stocked through both franchised and independent channels.

Frequently asked questions

What is the Rds(on) of BSP125L6433?

The maximum on-resistance is 45 Ohm at 120 mA drain current with a 10 V gate drive.

What is the BSP125L6433 used for?

It is a 600 V N-channel power MOSFET in a SOT-223 package, suited for high-voltage low-current switching — auxiliary power supplies, bias circuits, relay pre-drivers, and off-line start-up stages.