600 V N-Channel MOSFET for auxiliary and bias supplies
The Infineon BSP125L6327 is a 600 V N-Channel SIPMOS® power MOSFET in a PG-SOT223-4-21 surface-mount package. It delivers 120 mA continuous drain current with a maximum on-resistance of 45 Ohm at 10 V gate drive. The junction temperature range spans -55 to 150 °C, suiting it for off-line flyback auxiliary windings, high-voltage bias regulators, and discharge circuits in industrial power supplies.
Package and mounting
The PG-SOT223-4-21 is a four-lead surface-mount package with a large drain tab. The tab is the drain terminal — ensure the PCB copper area under the tab is sized for 1.8 W dissipation. Standard SOT223 footprint works; the tab can be soldered to a copper pour for thermal spreading. No through-hole or heatsink required at this power level.
