Infineon SIPMOS® N-Channel MOSFET, BSP125L6327, 600 V drain-source, 120 mA continuous drain, 45 Ohm Rds(on) at 10 V, PG-SOT223-4-21 surface-mount package, -55 to 150 °C junction temperature.
| Parameter | Value |
|---|---|
| Series | SIPMOS® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 120mA (Ta) |
| Power dissipation | 1.8W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-261-4, TO-261AA |
| Vgs(th) (Max) @ id | 2.3V @ 94µA |
| Rds on (Max) @ id, vgs | 45Ohm @ 120mA, 10V |
| Gate charge (Qg) (Max) @ vgs | 6.6 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 150 pF @ 25 V |
The junction temperature range spans -55 to 150 °C, suiting it for off-line flyback auxiliary windings, high-voltage bias regulators, and discharge circuits in industrial power supplies.
The PG-SOT223-4-21 is a four-lead surface-mount package with a large drain tab. Standard SOT223 footprint works; the tab can be soldered to a copper pour for thermal spreading. No through-hole or heatsink required at this power level.
The maximum on-resistance is 45 Ohm at 120 mA drain current with a 10 V gate drive.