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Infineon Technologies BSP125H6433XTMA1

Infineon BSP125H6433XTMA1 N-Channel MOSFET, 600 V, 120 mA

MPNBSP125H6433XTMA1
End of Life

Infineon SIPMOS N-Channel MOSFET, 600 V Vdss, 120 mA Id, 1.8 W, PG-SOT223-4, Surface Mount, -55 to 150 °C.

$0.86Ref. price · indicative, final on quote
PackagingTO-261-4, TO-261AA
RoHSROHS3 Compliant
SeriesSIPMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BSP125H6433XTMA1 specifications
ParameterValue
SeriesSIPMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C120mA (Ta)
Power dissipation1.8W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-261-4, TO-261AA
Vgs(th) (Max) @ id2.3V @ 94µA
Gate charge (Qg) (Max) @ vgs6.6 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds150 pF @ 25 V

Product details

The Infineon BSP125H6433XTMA1 is an N-Channel SIPMOS MOSFET rated for 600 V drain-to-source and 120 mA continuous drain current at 25°C, housed in a PG-SOT223-4 surface-mount package. It is a high-voltage, low-current switch designed for auxiliary power supplies, bias rails, and load disconnection in offline converters, LED lighting ballasts, and industrial control boards where the load stays under 120 mA and board space is tight. The 150 pF input capacitance at 25 V and 6.6 nC gate charge at 10 V keep gate-drive losses low, making it a fit for lightly loaded flyback or buck stages where the MOSFET is not the dominant thermal contributor.

600 V Vdss and 120 mA Id — what the ratings mean for the BOM

The 600 V drain-source breakdown voltage covers normal line transients without avalanche stress.

Frequently asked questions

Does BSP125H6433XTMA1 have a direct replacement or equivalent?

The Infineon IPD50R950CEAUMA1 is a functional alternative in the CoolMOS CE family, rated 500 V, 4.3 A, 53 W in a DPAK package. It is not a pin-compatible drop-in — the footprint and thermal design differ — but it serves the same class of high-voltage switching application at a higher current level.