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Infineon Technologies BSP125H6433XTMA1
Infineon Technologies

Infineon BSP125H6433XTMA1 N-Channel MOSFET, 600 V, 120 mA

MPNBSP125H6433XTMA1
End of Life

Infineon SIPMOS N-Channel MOSFET, 600 V Vdss, 120 mA Id, 1.8 W, PG-SOT223-4, Surface Mount, -55 to 150 °C.

$0.86Ref. price · indicative, final on quote
BSP125H6433XTMA1 datasheet
PackagingTO-261-4, TO-261AA
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BSP125H6433XTMA1 Technical Specifications
ParameterValue
SeriesSIPMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C120mA (Ta)
Power dissipation1.8W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-261-4, TO-261AA
Vgs(th) (Max) @ id2.3V @ 94µA
Gate charge (Qg) (Max) @ vgs6.6 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds150 pF @ 25 V

Product details

600 V N-Channel MOSFET in a SOT223-4 — what it is and where it fits

The Infineon BSP125H6433XTMA1 is an N-Channel SIPMOS MOSFET rated for 600 V drain-to-source and 120 mA continuous drain current at 25°C, housed in a PG-SOT223-4 surface-mount package. It is a high-voltage, low-current switch designed for auxiliary power supplies, bias rails, and load disconnection in offline converters, LED lighting ballasts, and industrial control boards where the load stays under 120 mA and board space is tight. The 150 pF input capacitance at 25 V and 6.6 nC gate charge at 10 V keep gate-drive losses low, making it a fit for lightly loaded flyback or buck stages where the MOSFET is not the dominant thermal contributor.

600 V Vdss and 120 mA Id — what the ratings mean for the BOM

The 600 V drain-source breakdown voltage covers normal line transients without avalanche stress.

Temperature range and environment

Rated for -55°C to 150°C junction temperature, this MOSFET covers cold-start conditions in outdoor telecom or engine-bay equipment.

Lifecycle and sourcing

The BSP125H6433XTMA1 carries an Active product status per the manufacturer and is ROHS3 compliant.

Frequently asked questions

Does BSP125H6433XTMA1 have a direct replacement or equivalent?

The Infineon IPD50R950CEAUMA1 is a functional alternative in the CoolMOS CE family, rated 500 V, 4.3 A, 53 W in a DPAK package. It is not a pin-compatible drop-in — the footprint and thermal design differ — but it serves the same class of high-voltage switching application at a higher current level.