600 V small-signal MOSFET in SOT-223
The Infineon BSP125H6327XTSA1 is an N-channel enhancement-mode MOSFET from the SIPMOS® family, rated for 600 V drain-source voltage and 120 mA continuous drain current. It comes in a PG-SOT223-4 surface-mount package with a tab for heat sinking. The wide junction temperature range from -55°C to 150°C qualifies it for industrial, automotive under-hood, and outdoor telecom environments where thermal cycling is severe.
Gate threshold voltage maximum is 2.3 V at 94 µA drain current.
Package, mounting, and thermal notes
Maximum power dissipation is 1.8 W at 25°C ambient, derated above that.
It is ROHS3 compliant, with no halogen or lead restrictions that would block use in EU or North American markets. The SIPMOS® series is a mature high-voltage MOSFET platform; second-source options from other manufacturers exist in the same SOT-223 footprint, but Infineon is the primary source for this specific order code.