The BSO615NGXUMA1: AEC-Q101 qualification means this part is released for automotive-grade applications: ECU load switching, solenoid drivers, relay replacement, and DC motor bridges where the 60 V rating provides headroom on a 12 V or 24 V nominal rail.
On-resistance and gate charge — sizing the driver and the thermal budget
Maximum Rds(on) is 150 mOhm at 2.6 A with a 4.5 V gate drive. At that current the conduction loss is I²R = 1.0 W per channel, which sits inside the 2 W package power limit only if both channels share the thermal budget — derate when switching both channels simultaneously at high duty. Total gate charge is 20 nC at 10 V. A 3.3 V MCU GPIO sourcing a few mA will take several microseconds to charge the gate; for switching above a few kHz, a dedicated gate driver or a pre-driver stage is needed to keep switching losses in check. Input capacitance Ciss is 380 pF at 25 V drain — low enough that the gate drive current for a 100 kHz PWM is under 40 µA average, but the peak current during the Miller plateau still determines the turn-on/turn-off delay.
Package and temperature grade — board fit and environment
The junction temperature range is -55 to 150 °C, covering the full automotive under-hood and industrial extended-temperature envelope. ROHS3 compliant — no exemptions that complicate EU or Asian production lines.