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Infineon Technologies BSO613SPVGXUMA1

Infineon BSO613SPVGXUMA1 P-Channel MOSFET, 60 V, 3.44 A

MPNBSO613SPVGXUMA1
End of Life

Infineon Automotive SIPMOS® BSO613SPVGXUMA1, P-Channel MOSFET, 60 V Vdss, 3.44 A continuous drain, 130 mOhm Rds(on) at 10 V, PG-DSO-8-6 package, -55°C to 150°C junction temperature.

$1.29Ref. price · indicative, final on quote
Infineon Technologies BSO613SPVGXUMA1 datasheet (PDF)
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
SeriesAutomotive, AEC-Q101, SIPMOS®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BSO613SPVGXUMA1 specifications
ParameterValue
SeriesAutomotive, AEC-Q101, SIPMOS®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C3.44A (Ta)
Power dissipation2.5W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id4V @ 1mA
Rds on (Max) @ id, vgs130mOhm @ 3.44A, 10V
Gate charge (Qg) (Max) @ vgs30 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds875 pF @ 25 V

Product details

Gate drive and switching considerations

The BSO613SPVGXUMA1 requires a gate drive of 10 V to achieve the rated on-resistance; the gate threshold is specified at 4 V maximum at 1 mA drain current. Input capacitance is 875 pF at 25 V drain-source, so the gate-drive source impedance should be low enough to avoid excessive switching losses in hard-switched topologies.

It is ROHS3 compliant. The AEC-Q101 qualification makes it suitable for automotive-grade BOMs without requiring a separate qualification waiver.

Frequently asked questions

Is BSO613SPVGXUMA1 a P-channel MOSFET?

Yes, the BSO613SPVGXUMA1 is a P-channel enhancement-mode MOSFET.

Is BSO613SPVGXUMA1 automotive qualified?

Yes, it is AEC-Q101 qualified as part of Infineon's Automotive SIPMOS® series.