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Infineon Technologies BSO303SPH — Discrete Semiconductors

Infineon BSO303SPH SIPMOS P-Channel MOSFET, 30V 7.2A 21mΩ

MPNBSO303SPH
End of Life

Infineon SIPMOS P-Channel MOSFET, BSO303SPH, 30V Vdss, 7.2A continuous drain, 21mOhm Rds(on) at 10V Vgs, SOIC-8 surface mount, -55°C to 150°C junction temperature.

$0.32Ref. price · indicative, final on quote
Infineon Technologies BSO303SPH datasheet (PDF)
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
SeriesSIPMOS®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

BSO303SPH specifications
ParameterValue
SeriesSIPMOS®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C7.2A (Ta)
Power dissipation1.56W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id2V @ 100µA
Rds on (Max) @ id, vgs21mOhm @ 9.1A, 10V
Gate charge (Qg) (Max) @ vgs54 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2330 pF @ 25 V

Product details

P-channel 30V MOSFET in SOIC-8 — what the 21 mΩ Rds(on) means for your load switch

Temperature range and package — where this part fits

The SOIC-8 footprint (PG-DSO-8-1 supplier package) is a common land pattern, so a board designed for any standard SOIC-8 MOSFET can take this part without a layout change. Power dissipation is limited to 1.56 W at 25°C ambient, so continuous high-current operation needs attention to copper area and airflow — this is not a TO-220 replacement for a 50 W load.

Gate charge and switching — what 54 nC tells the driver designer

That is a moderate figure for a P-channel in an SOIC-8 — a standard gate driver with 1 A peak output can switch it in the tens of nanoseconds. The input capacitance of 2330 pF at 25 V drain is consistent with the gate charge; together they define the driver's peak current requirement and the switching loss at frequency. For a 100 kHz PWM load switch, the gate-drive loss is negligible; at 500 kHz or above, the driver's sourcing capability starts to matter.

Frequently asked questions

Is BSO303SPH an equivalent for IRF9310?

Both are P-channel MOSFETs in SOIC-8 with a 30 V drain rating, but the BSO303SPH has a lower Rds(on) of 21 mΩ versus the IRF9310's typical 30 mΩ, which means less conduction loss at the same current. The gate threshold and drive voltage ranges differ, so check the Vgs(th) and gate charge curves in each datasheet before dropping one into the other's footprint — the pinout is the same, but the switching behaviour may shift.

What is the Rds(on) of BSO303SPH?

The maximum on-resistance is 21 mΩ at a drain current of 9.1 A and a gate-to-source voltage of 10 V. At lower gate drive (4.5 V) the Rds(on) is higher — the datasheet curve should be consulted for the exact value at your operating point.