21 mOhm Rds(on) at 9.1 A — the conduction loss floor for a P-channel SO-8
The BSO303SP is a P-Channel enhancement-mode MOSFET from Infineon's OptiMOS® -P series. Its maximum on-resistance is 21 mOhm at 9.1 A drain current and 10 V gate drive.
7.2 A continuous drain — thermal-package limited, not silicon-limited
The continuous drain current is rated at 7.2 A at 25 °C ambient, with maximum power dissipation of 1.56 W. Above 25 °C the current must be derated per the PG-DSO-8-1 package thermal resistance.
54 nC gate charge — drive current needed for switching frequency
Total gate charge is 54 nC at 10 V. The input capacitance is 2330 pF at 25 V drain bias.
Package and footprint — PG-DSO-8-1 (SOIC-8)
The gate threshold voltage is 2 V maximum at 100 µA drain current.