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Infineon Technologies BSO303SP

BSO303SP P-Channel MOSFET, 30 V, 21 mOhm, OptiMOS-P, SOIC-8

MPNBSO303SP
End of Life

Infineon OptiMOS® -P BSO303SP, P-Channel Power MOSFET, 30 V Vdss, 21 mOhm Rds(on) at 9.1 A, 7.2 A continuous drain, 54 nC gate charge, PG-DSO-8-1 package, -55°C to 150°C junction temperature.

$0.4Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSRoHS non-compliant
SeriesOptiMOS® -P
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BSO303SP specifications
ParameterValue
SeriesOptiMOS® -P
FET typeP-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C7.2A (Ta)
Power dissipation1.56W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id2V @ 100µA
Rds on (Max) @ id, vgs21mOhm @ 9.1A, 10V
Gate charge (Qg) (Max) @ vgs54 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2330 pF @ 25 V

Product details

The BSO303SP is a P-Channel enhancement-mode MOSFET from Infineon's OptiMOS® -P series.

7.2 A continuous drain — thermal-package limited, not silicon-limited

The continuous drain current is rated at 7.2 A at 25 °C ambient, with maximum power dissipation of 1.56 W. Above 25 °C the current must be derated per the PG-DSO-8-1 package thermal resistance.

54 nC gate charge — drive current needed for switching frequency

Total gate charge is 54 nC at 10 V.

Package and footprint — PG-DSO-8-1 (SOIC-8)

The gate threshold voltage is 2 V maximum at 100 µA drain current.

Frequently asked questions

What is the BSO303SP datasheet and technical specifications?

Engineers need full electrical characteristics to validate if the MOSFET meets design requirements.

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Is BSO303SP obsolete or still active production?

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What is the pinout and package of BSO303SP?

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What is the equivalent part for BSO303SP or a cross reference?

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