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Infineon Technologies BSO080P03SHXUMA1

BSO080P03SHXUMA1 - Infineon Technologies

MPNBSO080P03SHXUMA1
End of Life

MOSFET P-CH 30V 12.6A 8DSO

$1.85Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BSO080P03SHXUMA1 specifications
ParameterValue
SeriesOptiMOS™
FET typeP-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C12.6A (Ta)
Power dissipation1.79W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id2.2V @ 250µA
Rds on (Max) @ id, vgs8mOhm @ 14.9A, 10V
Gate charge (Qg) (Max) @ vgs136 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5890 pF @ 25 V