Infineon OptiMOS™ BSL307SPH6327XTSA1, P-Channel MOSFET, 30 V drain-source, 5.5 A continuous, 43 mOhm Rds(on) at 10 V, PG-TSOP-6-1 package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 5.5A (Ta) |
| Power dissipation | 2W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | SC-74, SOT-457 |
| Vgs(th) (Max) @ id | 2V @ 40µA |
| Rds on (Max) @ id, vgs | 43mOhm @ 5.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 29 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 805 pF @ 25 V |
The Infineon BSL307SPH6327XTSA1 is a P-Channel OptiMOS™ MOSFET rated for 30 V drain-source and 5.5 A continuous drain current. It comes in a PG-TSOP-6-1 surface-mount package, making it a compact choice for load switching, battery protection, and power-rail OR-ing in space-constrained designs.
Infineon lists the BSL307SPH6327XTSA1 as Active. The part is ROHS3 compliant.
The maximum gate threshold voltage is 2 V at 40 µA drain current. That means the MOSFET starts conducting with a gate drive above 2 V, but for the lowest on-resistance, drive it with 4.5 V to 10 V as specified.
Yes, it is ROHS3 compliant, which restricts lead and other hazardous substances.
The IPD50R950CEAUMA1 is a different class of device — an N-Channel 500 V CoolMOS™, not a P-Channel 30 V part. It is not a functional equivalent. For a P-Channel 30 V load switch, stick with the BSL307SPH6327XTSA1 or another P-Channel MOSFET in the same voltage and current class.