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Infineon Technologies BSL211SPH6327XTSA1
Infineon Technologies

Infineon BSL211SPH6327XTSA1 P-Channel MOSFET, 20 V, 4.7 A

MPNBSL211SPH6327XTSA1
End of Life

Infineon OptiMOS BSL211SPH6327XTSA1, P-Channel MOSFET, 20 V Vds, 4.7 A Id, 67 mOhm Rds(on) at 4.5 V, TSOT-23-6 package, -55 to 150 °C junction temperature.

$0.63Ref. price · indicative, final on quote
BSL211SPH6327XTSA1 datasheet
PackagingSOT-23-6 Thin, TSOT-23-6
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

BSL211SPH6327XTSA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeP-Channel
Mounting typeSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C4.7A (Ta)
Power dissipation2W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
CaseSOT-23-6 Thin, TSOT-23-6
Vgs(th) (Max) @ id1.2V @ 25µA
Rds on (Max) @ id, vgs67mOhm @ 4.7A, 4.5V
Gate charge (Qg) (Max) @ vgs12.4 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds654 pF @ 15 V

Product details

P-channel load switch for 12 V rails

It is housed in a thin TSOT-23-6 package (PG-TSOP6-6) for surface-mount assembly. The 67 mOhm max on-resistance at 4.5 V gate drive makes it a fit for low-side load switching or power-rail OR-ing in 12 V systems where conduction loss matters.

Rds(on) and gate drive voltage

Rds(on) is specified at 67 mOhm max with Vgs = 4.5 V and Id = 4.7 A. The drive voltage range spans 2.5 V to 4.5 V for minimum and maximum Rds(on), so a 3.3 V logic-level gate signal will turn the device on but with higher resistance than the 4.5 V condition. Gate charge is 12.4 nC max at Vgs = 10 V, which keeps switching losses low in moderate-frequency applications.

Temperature range and thermal limits

Junction temperature range is -55 °C to 150 °C, covering automotive under-hood and industrial environments. Maximum power dissipation is 2 W at 25 °C ambient, derated above that. Input capacitance is 654 pF at Vds = 15 V, which influences gate-drive rise time and switching losses.

Frequently asked questions

Is BSL211SPH6327XTSA1 obsolete?

No.

What is the equivalent of BSL211SPH6327XTSA1?

The IPD50R950CEAUMA1 is an N-channel CoolMOS device with a 500 V rating and different package, not a functional equivalent for this P-channel 20 V part.