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Infineon Technologies BSF134N10NJ3GXUMA1
Infineon Technologies

Infineon BSF134N10NJ3GXUMA1 N-Channel MOSFET, 100V, 9A/40A

MPNBSF134N10NJ3GXUMA1
End of Life

Infineon OptiMOS N-Channel MOSFET, 100 V Vdss, 9 A (Ta) / 40 A (Tc) continuous drain, 13.4 mOhm Rds(on) at 30 A, 10 V gate drive, 3-WDSON CanPAK M package, -40°C to 150°C junction temperature.

$2.12Ref. price · indicative, final on quote
BSF134N10NJ3GXUMA1 datasheet
Packaging3-WDSON
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

BSF134N10NJ3GXUMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C9A (Ta), 40A (Tc)
Power dissipation2.2W (Ta), 43W (Tc)
Operating temperature-40°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case3-WDSON
Vgs(th) (Max) @ id3.5V @ 40µA
Rds on (Max) @ id, vgs13.4mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs30 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2300 pF @ 50 V

Product details

Gate drive and switching parameters

The BSF134N10NJ3GXUMA1: Maximum gate threshold voltage is 3.5 V at 40 µA drain current. The datasheet recommends 10 V for the lowest Rds(on). Total gate charge is 30 nC at 10 V — a moderate figure that keeps switching losses manageable in hard-switched topologies up to a few hundred kHz. Input capacitance is 2300 pF at 50 V drain-source. The absolute maximum gate-source voltage is ±20 V, giving margin for ringing on the gate node.

Sourcing and lifecycle

Infineon lists this part as Active. No last-time-buy or discontinuation notice is in effect. The part is ROHS3 compliant. For BOM freeze or second-source planning, note that the 3-WDSON CanPAK M footprint is specific to Infineon's OptiMOS family — there is no pin-compatible drop-in from another manufacturer in the same package. If a dual-source strategy is required, Infineon's own CoolMOS CE series (e.g.

Frequently asked questions

What is the exact Rds(on) and Vgs(th) for BSF134N10NJ3GXUMA1?

Maximum Rds(on) is 13.4 mOhm at 30 A drain current with 10 V gate drive. Maximum gate threshold voltage (Vgs(th)) is 3.5 V at 40 µA drain current.

What package and footprint does BSF134N10NJ3GXUMA1 use?

The package is a 3-WDSON, also called CanPAK M (supplier device package MG-WDSON-2). It is a surface-mount, leadless package with a large drain pad on the bottom for thermal and electrical connection.

Can BSF134N10NJ3GXUMA1 handle 30 A continuous?

Yes, the continuous drain current rating is 40 A at the case (Tc) at 25°C, so 30 A is within the rating. At ambient temperature (Ta) the rating is 9 A, so adequate heatsinking or forced airflow is required to use the higher case rating.