Skip to main content
Infineon Technologies BSD235CH6327XTSA1
Infineon Technologies

Infineon BSD235CH6327XTSA1 OptiMOS™ Dual N/P-Ch MOSFET, 20V

MPNBSD235CH6327XTSA1
End of Life

Infineon OptiMOS™ BSD235CH6327XTSA1 dual N- and P-Channel MOSFET, 20V Vdss, 950mA/530mA continuous drain, 350mOhm Rds(on), logic-level gate, PG-SOT363-6-1 surface-mount package.

$0.44Ref. price · indicative, final on quote
BSD235CH6327XTSA1 datasheet
Packaging6-VSSOP, SC-88, SOT-363
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BSD235CH6327XTSA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
Mounting typeSurface Mount
Drain to source voltage20V
Current - continuous drain (Id) @ 25°C950mA, 530mA
Power - max500mW
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET featureLogic Level Gate
ConfigurationN and P-Channel
Case6-VSSOP, SC-88, SOT-363
Vgs(th) (Max) @ id1.2V @ 1.6µA
Rds on (Max) @ id, vgs350mOhm @ 950mA, 4.5V
Gate charge (Qg) (Max) @ vgs0.34nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds47pF @ 10V

Product details

What this dual MOSFET does on your board

Operating junction temperature spans -55°C to 150°C, covering automotive under-hood and industrial environments without derating concerns. Input capacitance is 47pF at 10V Vds, which together with the low gate charge keeps switching losses low in DC-DC converters and signal-level switching applications.

Sourcing and lifecycle

The BSD235CH6327XTSA1 carries an Active lifecycle status from Infineon, with no announced end-of-life or last-time-buy. It is ROHS3 compliant. For BOM planning, this means no imminent obsolescence risk — the part can be specified into new designs with confidence.

Frequently asked questions

What are the key ratings of BSD235CH6327XTSA1?

Dual N/P-channel MOSFET, 20V Vdss, 950mA (N-ch) and 530mA (P-ch) continuous drain current at 25°C, 350mOhm max Rds(on) at 4.5V Vgs, logic-level gate threshold (1.2V max), 0.34nC gate charge, 47pF input capacitance, 500mW max power dissipation, -55°C to 150°C junction temperature range, PG-SOT363-6-1 package.

Does BSD235CH6327XTSA1 require a heat sink?

At 500mW maximum power dissipation and in a small SOT-363 package, a dedicated heat sink is not practical. For continuous operation near the current limits, use a copper pour on the PCB to help dissipate heat and keep junction temperature below 150°C.