Active production — small-signal N-channel for load switching
The Infineon BSD214SNL6327 is a small-signal N-channel MOSFET from the OptiMOS™2 series, rated for 20 V drain-source and 1.5 A continuous switching current.
140 mOhm on-resistance at 4.5 V gate drive
The Rds(on) is specified at 140 mOhm maximum with 4.5 V on the gate and 1.5 A drain current — a typical logic-level gate-drive voltage. At 1.5 A the conduction loss is 315 mW, which fits within the 0.5 W power dissipation limit with margin for switching losses. Gate charge is just 0.8 nC at 5 V Vgs, so a microcontroller GPIO or a low-current driver can switch the gate without an external driver IC. The threshold voltage is 1.2 V max at 3.7 µA, confirming logic-level turn-on.
Junction temperature range -55 to 150 °C
The operating junction temperature spans -55 to 150 °C, covering automotive under-hood and industrial environments where ambient temperatures push past 125 °C. The absolute maximum gate-source voltage is ±12 V, which gives headroom for gate-drive overshoot in noisy supplies.