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Infineon Technologies BSC889N03MSG

BSC889N03MSG - Infineon Technologies

MPNBSC889N03MSG
End of Life

N-CHANNEL POWER MOSFET

$0.24Ref. price · indicative, final on quote
Packaging8-PowerTDFN
RoHSROHS3 Compliant
SeriesOptiMOS™ 3
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BSC889N03MSG specifications
ParameterValue
SeriesOptiMOS™ 3
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C12A (Ta), 44A (Tc)
Power dissipation2.5W (Ta), 28W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs9.1mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs20 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1500 pF @ 15 V