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Infineon Technologies BSC886N03LS G

Infineon BSC886N03LS G N-Channel MOSFET, 30 V, 6 mOhm

MPNBSC886N03LS G
End of Life

Infineon OptiMOS 3 BSC886N03LS G, N-channel MOSFET, 30 V Vdss, 6 mOhm Rds(on) at 30 A, 10 V gate, 26 nC Qg, PG-TDSON-8 package, -55 to 150 °C junction.

$0.25Ref. price · indicative, final on quote
Packaging8-PowerTDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

BSC886N03LS G Technical Specifications
ParameterValue
SeriesOptiMOS™3
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C13A (Ta), 65A (Tc)
Power dissipation2.5W (Ta), 39W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2.2V @ 250µA
Rds on (Max) @ id, vgs6mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs26 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2100 pF @ 15 V

Product details

Dual current rating — board vs heatsink

The BSC886N03LS G: Continuous drain current is rated 13 A at 25 °C ambient (Ta) and 65 A at 25 °C case (Tc). The Ta rating reflects the 2.5 W power dissipation limit in free air; the Tc rating of 39 W dissipation requires a thermal pad or heatsink on the PG-TDSON-8 package to reach the silicon limit.

Gate charge and switching speed

Total gate charge Qg is 26 nC at 10 V gate drive, with an input capacitance Ciss of 2100 pF at 15 V drain-source.

Temperature range and package

The PG-TDSON-8 (8-PowerTDFN) surface-mount package has an exposed drain pad for thermal vias to the PCB ground plane.

Frequently asked questions

What is the Rds(on) of BSC886N03LS G?

Maximum on-resistance is 6 mOhm at a drain current of 30 A with a 10 V gate-source drive.