Infineon OptiMOS 3 BSC886N03LS G, N-channel MOSFET, 30 V Vdss, 6 mOhm Rds(on) at 30 A, 10 V gate, 26 nC Qg, PG-TDSON-8 package, -55 to 150 °C junction.
| Parameter | Value |
|---|---|
| Series | OptiMOS™3 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 13A (Ta), 65A (Tc) |
| Power dissipation | 2.5W (Ta), 39W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 2.2V @ 250µA |
| Rds on (Max) @ id, vgs | 6mOhm @ 30A, 10V |
| Gate charge (Qg) (Max) @ vgs | 26 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2100 pF @ 15 V |
The BSC886N03LS G: Continuous drain current is rated 13 A at 25 °C ambient (Ta) and 65 A at 25 °C case (Tc). The Ta rating reflects the 2.5 W power dissipation limit in free air; the Tc rating of 39 W dissipation requires a thermal pad or heatsink on the PG-TDSON-8 package to reach the silicon limit.
The PG-TDSON-8 (8-PowerTDFN) surface-mount package has an exposed drain pad for thermal vias to the PCB ground plane.
Maximum on-resistance is 6 mOhm at a drain current of 30 A with a 10 V gate-source drive.