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Infineon Technologies BSC884N03MSG

Infineon BSC884N03MSG OptiMOS N-Channel MOSFET, 34 V

MPNBSC884N03MSG
End of Life

Infineon OptiMOS™ N-Channel Power MOSFET, 34 V Vdss, 4.5 mOhm Rds(on) at 30 A, 85 A continuous drain (Tc), PG-TDSON-8-1 package, -55°C to 150°C junction temperature.

$0.35Ref. price · indicative, final on quote
Packaging8-PowerTDFN
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BSC884N03MSG specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage34 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C17A (Ta), 85A (Tc)
Power dissipation2.5W (Ta), 50W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs4.5mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs34 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2700 pF @ 15 V

Product details

OptiMOS™ N-channel power MOSFET for efficient switching

The Infineon BSC884N03MSG is an N-channel enhancement-mode power MOSFET from the OptiMOS™ family, built on a metal-oxide semiconductor trench process. It delivers a continuous drain current of 85 A at the case (Tc) and 17 A at ambient (Ta), with a maximum drain-source voltage of 34 V. The on-resistance is rated at 4.5 mOhm maximum at 30 A with a 10 V gate drive, making it a strong candidate for low-voltage, high-current switching in synchronous rectification, DC-DC converters, and motor-drive output stages. The PG-TDSON-8-1 package (8-PowerTDFN) is a surface-mount, thermally enhanced footprint suited for compact power-stage layouts.

With a maximum gate charge of 34 nC at 10 V and an input capacitance of 2700 pF at 15 V Vds, the BSC884N03MSG presents a moderate gate-drive load. The ±20 V Vgs maximum provides headroom for gate-drive transients in noisy environments. This part is well-suited for hard-switched topologies where switching losses are manageable with a standard gate-driver IC.

Thermal and environmental rating

Power dissipation is rated at 2.5 W at ambient and 50 W at the case — a wide spread that underscores the dependence on PCB copper area and heatsinking.

Frequently asked questions

What is the Rds(on) of BSC884N03MSG?

The maximum on-resistance is 4.5 mOhm at a drain current of 30 A with a 10 V gate drive. This is the spec to use for conduction-loss calculations in a 10 V driven design.

What is the closest pin-compatible alternative to BSC884N03MSG?

No official cross-reference or second-source alternate is listed for this exact order code. For a drop-in replacement, verify the PG-TDSON-8-1 footprint, 34 V Vdss, and 4.5 mOhm Rds(on) against other OptiMOS parts in the same package; Infineon's parametric search is the best tool for that comparison.