OptiMOS™ N-channel power MOSFET for efficient switching
The Infineon BSC884N03MSG is an N-channel enhancement-mode power MOSFET from the OptiMOS™ family, built on a metal-oxide semiconductor trench process. It delivers a continuous drain current of 85 A at the case (Tc) and 17 A at ambient (Ta), with a maximum drain-source voltage of 34 V. The on-resistance is rated at 4.5 mOhm maximum at 30 A with a 10 V gate drive, making it a strong candidate for low-voltage, high-current switching in synchronous rectification, DC-DC converters, and motor-drive output stages. The PG-TDSON-8-1 package (8-PowerTDFN) is a surface-mount, thermally enhanced footprint suited for compact power-stage layouts.
Gate drive and switching profile
With a maximum gate charge of 34 nC at 10 V and an input capacitance of 2700 pF at 15 V Vds, the BSC884N03MSG presents a moderate gate-drive load. The drive voltage range spans 4.5 V to 10 V for achieving rated Rds(on); the 10 V drive yields the lowest on-resistance. The ±20 V Vgs maximum provides headroom for gate-drive transients in noisy environments. This part is well-suited for hard-switched topologies where switching losses are manageable with a standard gate-driver IC.
Thermal and environmental rating
The junction temperature range spans -55°C to 150°C, covering automotive under-hood and industrial enclosure environments. Power dissipation is rated at 2.5 W at ambient and 50 W at the case — a wide spread that underscores the dependence on PCB copper area and heatsinking.