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Infineon Technologies BSC883N03MSG

BSC883N03MSG N-Channel Power MOSFET, 34 V, 3.8 mOhm

MPNBSC883N03MSG
End of Life

Infineon OptiMOS™3M BSC883N03MSG, N-Channel Power MOSFET, 34 V Drain-Source, 3.8 mOhm Rds(on) @ 30 A, 10 V Gate Drive, 41 nC Gate Charge, PG-TDSON-8 Package, -55 to 150 °C.

$0.35Ref. price · indicative, final on quote
Packaging8-PowerTDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
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  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

BSC883N03MSG Technical Specifications
ParameterValue
SeriesOptiMOS™3M
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage34 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C19A (Ta), 98A (Tc)
Power dissipation2.5W (Ta), 57W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs3.8mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs41 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3200 pF @ 15 V

Product details

98 A at case — 19 A at ambient: reading the dual current rating

The continuous drain current is rated 98 A when the case temperature is held at 25 °C (Tc), but drops to 19 A when the ambient air is 25 °C (Ta) with the part free-standing. That 5:1 ratio tells you the PG-TDSON-8 package can move heat to a heatsink or board copper plane, but without it the junction-to-ambient thermal resistance limits you to about 2.5 W dissipation. The 57 W power dissipation at Tc is real only if the PCB copper area under the drain tab matches the Infineon layout recommendation.

41 nC gate charge — what it costs to switch

Gate charge Qg is 41 nC typical at 10 V. In a 500 kHz buck converter the gate drive loss is Qg × Vgs × fsw, about 0.2 W — manageable from a 1 A gate driver. The 3200 pF input capacitance at 15 V drain bias means the driver sees a capacitive load that slows the switching edge if the gate loop inductance is not kept tight. The 4.5 V drive voltage option lets you run from a 5 V logic rail, but the Rds(on) will rise above the 3.8 mOhm minimum — the 10 V drive is where the datasheet guarantees the lowest resistance.

ROHS3 compliant. No official successor or cross-reference is published — the part is still in the Infineon portfolio for new designs.

Frequently asked questions

What is the BSC883N03MSG equivalent or replacement?

No official second-source or cross-reference is published for this order code. The IPD50R950CEAUMA1 is a different class of device — a 500 V CoolMOS CE part with 950 mOhm Rds(on), not a functional replacement for a 34 V, 3.8 mOhm OptiMOS 3M FET. For a pin-compatible substitute, confirm the PG-TDSON-8 footprint and the 34 V / 3.8 mOhm target against the Infineon portfolio.

What is the maximum current for BSC883N03MSG?

Continuous drain current is rated 98 A at the case temperature (Tc = 25 °C) and 19 A at ambient temperature (Ta = 25 °C). The 98 A figure assumes the drain tab is thermally managed to keep the case at 25 °C; the 19 A figure applies to free-air operation on a standard PCB.

Is BSC883N03MSG lead-free and ROHS compliant?

Yes, the BSC883N03MSG is ROHS3 compliant.