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Infineon Technologies BSC883N03LSG

BSC883N03LSG OptiMOS 3 N-Channel Power MOSFET

MPNBSC883N03LSG
End of Life

Infineon OptiMOS™ 3 BSC883N03LSG N-channel power MOSFET, 34 V Vdss, 3.8 mOhm max at 30 A, 10 V, 98 A continuous drain, PG-TDSON-8 package, surface mount.

$0.33Ref. price · indicative, final on quote
Packaging8-PowerTDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
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Specifications

BSC883N03LSG Technical Specifications
ParameterValue
SeriesOptiMOS™ 3
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage34 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C17A (Ta), 98A (Tc)
Power dissipation2.5W (Ta), 57W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2.2V @ 250µA
Rds on (Max) @ id, vgs3.8mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs34 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2800 pF @ 15 V

Product details

3.8 mOhm at 10 V — conduction loss anchor

The BSC883N03LSG from Infineon's OptiMOS™ 3 family is an N-channel power MOSFET rated for a maximum drain-source voltage of 34 V and continuous drain current of 98 A at case temperature. Its on-resistance of 3.8 mOhm at 30 A, 10 V gate drive sets the conduction loss floor for high-efficiency switching applications such as synchronous rectification in DC-DC converters and load switches in 12 V automotive or industrial power rails.

Gate charge and switching speed

Total gate charge is 34 nC at 10 V, which translates to a gate-drive current requirement of roughly 3.4 mA average per 100 kHz switching frequency — well within the capability of standard MOSFET drivers. The input capacitance of 2800 pF at 15 V drain-source helps the designer size the gate-drive loop for clean turn-on without excessive ringing.

Frequently asked questions

What is the Rds(on) of BSC883N03LSG at 10 V?

This figure is the key parameter for conduction loss estimation in high-current switching designs.