3.8 mOhm at 10 V — conduction loss anchor
The BSC883N03LSG from Infineon's OptiMOS™ 3 family is an N-channel power MOSFET rated for a maximum drain-source voltage of 34 V and continuous drain current of 98 A at case temperature. Its on-resistance of 3.8 mOhm at 30 A, 10 V gate drive sets the conduction loss floor for high-efficiency switching applications such as synchronous rectification in DC-DC converters and load switches in 12 V automotive or industrial power rails.
Gate charge and switching speed
Total gate charge is 34 nC at 10 V, which translates to a gate-drive current requirement of roughly 3.4 mA average per 100 kHz switching frequency — well within the capability of standard MOSFET drivers. The input capacitance of 2800 pF at 15 V drain-source helps the designer size the gate-drive loop for clean turn-on without excessive ringing.
