Infineon OptiMOS™3 M BSC882N03LS G, N-Channel MOSFET, 34 V Vdss, 4.2 mOhm Rds(on) @ 30 A, 10 V, 8-PowerTDFN (PG-TDSON-8-6), -55°C to 150°C, Active.
| Parameter | Value |
|---|---|
| Series | OptiMOS™3 M |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 34 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 2.2V @ 250µA |
| Rds on (Max) @ id, vgs | 4.2mOhm @ 30A, 10V |
| Input capacitance (Ciss) (Max) @ vds | 3700 pF @ 15 V |
The Infineon BSC882N03LS G is a 34 V N-channel power MOSFET from the OptiMOS™3 M series, built on a metal-oxide trench technology.
The ±20 V Vgs max gives headroom for gate-drive transients. Input capacitance is 3700 pF at 15 V drain-source.
The BSC882N03LS G is listed as Active on the Infineon product line.
No — the specified Rds(on) is at 10 V gate drive, and the maximum threshold voltage is 2.2 V at 250 µA. It is not characterized for 5 V or 3.3 V gate drive; a logic-level MOSFET would specify Rds(on) at 4.5 V or lower.
No official replacement or successor is listed. The peer BSC882N03LSG carries identical electrical ratings and the same package — it is the same die in a different ordering code variant. For a functional cross, compare the 34 V, 4.2 mOhm, 8-PowerTDFN profile against other OptiMOS™3 M parts in the same voltage class.