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Infineon Technologies BSC882N03LS G
Infineon Technologies

Infineon BSC882N03LS G N-Channel MOSFET, 34 V, 4.2 mOhm

MPNBSC882N03LS G
End of Life

Infineon OptiMOS™3 M BSC882N03LS G, N-Channel MOSFET, 34 V Vdss, 4.2 mOhm Rds(on) @ 30 A, 10 V, 8-PowerTDFN (PG-TDSON-8-6), -55°C to 150°C, Active.

$0.39Ref. price · indicative, final on quote
BSC882N03LS G datasheet
Packaging8-PowerTDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BSC882N03LS G Technical Specifications
ParameterValue
SeriesOptiMOS™3 M
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage34 V
Drive voltage (Max rds on, min rds on)10V
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2.2V @ 250µA
Rds on (Max) @ id, vgs4.2mOhm @ 30A, 10V
Input capacitance (Ciss) (Max) @ vds3700 pF @ 15 V

Product details

34 V N-channel MOSFET for high-density switching

The Infineon BSC882N03LS G is a 34 V N-channel power MOSFET from the OptiMOS™3 M series, built on a metal-oxide trench technology. Its 4.2 mOhm maximum on-resistance at 30 A and 10 V gate drive keeps conduction losses low in point-of-load converters, motor pre-drives, and battery-management switching stages. The 8-PowerTDFN package (PG-TDSON-8-6) is a surface-mount footprint with a source tab for thermal transfer — board layout needs a solid via array under the pad to pull heat into the inner plane.

Rds(on) and gate drive — what they mean for the BOM

The 4.2 mOhm Rds(on) is specified at 30 A with a 10 V gate drive. The ±20 V Vgs max gives headroom for gate-drive transients. Input capacitance is 3700 pF at 15 V drain-source.

Temperature range and environment

Rated for -55°C to 150°C junction temperature.

Lifecycle and sourcing

The BSC882N03LS G is listed as Active on the Infineon product line. No end-of-life notice or last-time-buy window is in effect.

Frequently asked questions

Is BSC882N03LS G a logic-level MOSFET?

No — the specified Rds(on) is at 10 V gate drive, and the maximum threshold voltage is 2.2 V at 250 µA. It is not characterized for 5 V or 3.3 V gate drive; a logic-level MOSFET would specify Rds(on) at 4.5 V or lower.

What is the replacement for BSC882N03LS G?

No official replacement or successor is listed. The peer BSC882N03LSG carries identical electrical ratings and the same package — it is the same die in a different ordering code variant. For a functional cross, compare the 34 V, 4.2 mOhm, 8-PowerTDFN profile against other OptiMOS™3 M parts in the same voltage class.