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Infineon Technologies BSC600N25NS3GATMA1
Infineon Technologies

Infineon BSC600N25NS3GATMA1 N-Channel MOSFET, 250 V, 25 A

MPNBSC600N25NS3GATMA1
End of Life

Infineon OptiMOS N-Channel MOSFET, 250 V drain-source, 25 A continuous drain, 60 mOhm Rds(on) at 10 V, 29 nC gate charge, PG-TDSON-8-1 package, -55°C to 150°C junction temperature.

$3.45Ref. price · indicative, final on quote
BSC600N25NS3GATMA1 datasheet
Packaging8-PowerTDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BSC600N25NS3GATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage250 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C25A (Tc)
Power dissipation125W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id4V @ 90µA
Rds on (Max) @ id, vgs60mOhm @ 25A, 10V
Gate charge (Qg) (Max) @ vgs29 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2350 pF @ 100 V

Product details

250 V N-channel in a compact TDSON-8 — what the ratings mean for the BOM

The Infineon BSC600N25NS3GATMA1 is a 250 V N-channel MOSFET from the OptiMOS series, rated for 25 A continuous drain current at 25 °C case temperature. The 60 mOhm maximum on-resistance at 10 V gate drive defines the conduction loss at full load. The part is housed in a PG-TDSON-8-1 package — an 8-lead PowerTDFN with an exposed pad for thermal dissipation. The surface-mount footprint is standard for this class, but the pad layout and solder-paste stencil aperture must match the manufacturer's land pattern to achieve the rated thermal resistance. The junction temperature range spans -55°C to 150°C, covering military and automotive thermal extremes.

Frequently asked questions

Can I replace BSC600N25NS3G with another Infineon MOSFET?

If the replacement must match the 250 V, 25 A, 60 mOhm rating and the TDSON-8 footprint, the BSC600N25NS3G is the active part. The IPD50R950CEAUMA1 is a 500 V device with lower current and higher on-resistance — it is not a functional replacement for this BOM line.