Rds(on) and gate charge — what they mean for the switching stage
The 50 mOhm maximum on-resistance at 22 A and 10 V gate drive is the figure that determines conduction loss in the on-state. At that current level, the I²R loss is roughly 24 W, which the 96 W package power dissipation can handle with adequate heatsinking. The 15 nC gate charge at 10 V is low enough that a standard 1 A gate-driver IC can switch the MOSFET in the tens-of-nanoseconds range, keeping crossover losses in check for a 200 V rail. This combination — moderate Rds(on) with low gate charge — makes the part a good fit for a 200 V input half-bridge or a flyback primary switch where board space is tight and the TDSON-8 package saves area over a DPAK or D2PAK.
Active lifecycle and ROHS3 compliance
Active product status from Infineon, ROHS3 compliant.