Infineon OptiMOS BSC265N10LSFGATMA1, N-Channel MOSFET, 100 V Vdss, 26.5 mOhm Rds(on) at 20 A, 10 V gate drive, 21 nC gate charge, PG-TDSON-8 surface-mount package, -55 to 150 °C junction temperature.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 6.5A (Ta), 40A (Tc) |
| Power dissipation | 78W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 2.4V @ 43µA |
| Rds on (Max) @ id, vgs | 26.5mOhm @ 20A, 10V |
| Gate charge (Qg) (Max) @ vgs | 21 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1600 pF @ 50 V |
The 26.5 mOhm Rds(on) at 20 A is specified at 10 V gate drive, with a minimum drive voltage of 4.5 V for the lowest on-resistance. The 21 nC gate charge at 10 V is moderate.
It is ROHS3 compliant, with no end-of-life notice. For new designs, this part is a safe choice without an imminent last-time-buy risk.
The maximum Rds(on) is 26.5 mOhm at 20 A drain current with a 10 V gate drive.
Yes, it is ROHS3 compliant.