The Infineon BSC252N10NSFGATMA1 is a 100 V N-channel MOSFET from the OptiMOS series, housed in a PG-TDSON-8-1 package. It is rated for a continuous drain current of 40 A when the case temperature is held at 25°C, and 7.2 A when the ambient air is the thermal reference — the 40 A figure is the one to use for a heatsinked or board-mounted design where the exposed pad carries the heat to the PCB copper. The 25.2 mOhm maximum on-resistance at 20 A drain current and 10 V gate drive sets the conduction-loss floor for a synchronous buck, an OR-ing diode replacement, or a load switch on a 48 V or 24 V rail. At 20 A the I²R loss is about 10 W — the 78 W maximum power dissipation at the case gives plenty of headroom when the thermal interface is properly managed.
Gate charge and switching speed — sizing the driver
Total gate charge at 10 V is 17 nC, which is low for a 100 V / 40 A device. A typical gate driver delivering 1 A peak can charge the gate in about 17 ns, making this part usable in hard-switching topologies above 100 kHz without the driver spending most of its output current on reactive charge. Input capacitance is 1100 pF at 50 V drain-source. That capacitance, combined with the low gate charge, keeps the Miller plateau short — the switching losses in a 200 kHz LLC converter stay manageable without a bootstrap booster.
Temperature range and deployment envelope
The 150°C maximum junction temperature is the absolute ceiling — the 78 W power dissipation rating assumes the case is held at 25°C, so real-world derating is needed above that ambient.
Lifecycle and supply posture
It is ROHS3 compliant.