BSC196N10NSGATMA1 - Infineon Technologies
MPNBSC196N10NSGATMA1
End of Life
MOSFET N-CH 100V 8.5A/45A TDSON
$1.23Ref. price · indicative, final on quote
Packaging8-PowerTDFN
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 8.5A (Ta), 45A (Tc) |
| Power dissipation | 78W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 4V @ 42µA |
| Rds on (Max) @ id, vgs | 19.6mOhm @ 45A, 10V |
| Gate charge (Qg) (Max) @ vgs | 34 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2300 pF @ 50 V |