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Infineon Technologies BSC190N15NS3GATMA1

BSC190N15NS3GATMA1 - Infineon Technologies

MPNBSC190N15NS3GATMA1
End of Life

MOSFET N-CH 150V 50A TDSON-8-1

$2.97Ref. price · indicative, final on quote
Packaging8-PowerTDFN
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BSC190N15NS3GATMA1 specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage150 V
Drive voltage (Max rds on, min rds on)8V, 10V
Current - continuous drain (Id) @ 25°C50A (Tc)
Power dissipation125W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id4V @ 90µA
Rds on (Max) @ id, vgs19mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs31 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2420 pF @ 75 V