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Infineon Technologies BSC160N15NS5ATMA1

BSC160N15NS5ATMA1 - Infineon Technologies

MPNBSC160N15NS5ATMA1
End of Life

MOSFET N-CH 150V 56A TDSON

$2.78Ref. price · indicative, final on quote
Packaging8-PowerTDFN
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BSC160N15NS5ATMA1 specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage150 V
Drive voltage (Max rds on, min rds on)8V, 10V
Current - continuous drain (Id) @ 25°C56A (Tc)
Power dissipation96W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id4.6V @ 60µA
Rds on (Max) @ id, vgs16mOhm @ 28A, 10V
Gate charge (Qg) (Max) @ vgs23.1 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1820 pF @ 75 V

Frequently asked questions

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What is the equivalent part for BSC160N15NS5ATMA1?

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Can BSC160N15NS5ATMA1 be used in high-frequency applications?

Design engineers need to know if the gate charge and capacitance are suitable for the switching frequency.