
BSC160N15NS5ATMA1 - Infineon Technologies
MOSFET N-CH 150V 56A TDSON
Specifications
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 150 V |
| Drive voltage (Max rds on, min rds on) | 8V, 10V |
| Current - continuous drain (Id) @ 25°C | 56A (Tc) |
| Power dissipation | 96W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 4.6V @ 60µA |
| Rds on (Max) @ id, vgs | 16mOhm @ 28A, 10V |
| Gate charge (Qg) (Max) @ vgs | 23.1 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1820 pF @ 75 V |
Frequently asked questions
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Can BSC160N15NS5ATMA1 be used in high-frequency applications?
Design engineers need to know if the gate charge and capacitance are suitable for the switching frequency.