100 V N-channel in a compact power package
The Infineon BSC160N10NS3GATMA1 is an N-channel MOSFET from the OptiMOS™ series, rated for 100 V drain-source voltage and 42 A continuous drain current at the case. The 16 mOhm max on-resistance at 10 V gate drive keeps conduction losses low. Gate charge of 25 nC at 10 V sets the switching-speed budget; the 1700 pF input capacitance at 50 V drain-source tells the gate-driver designer what output impedance they need for the target rise time. The part is housed in an 8-PowerTDFN (PG-TDSON-8-1) surface-mount package, a compact footprint with an exposed thermal pad that must be soldered to a copper plane for the 60 W power dissipation rating to hold. The -55°C to 150°C junction temperature range qualifies it for automotive under-hood and industrial motor-drive environments where the ambient can spike.
Lifecycle and compliance
The BSC160N10NS3GATMA1 is listed as Active in production and ROHS3 compliant. No NRND or EOL notice is on record. The series is OptiMOS™, Infineon's mainstream trench MOSFET family for power conversion and load switching.