100 V N-channel in a compact power package
The Infineon BSC160N10NS3GATMA1 is an N-channel MOSFET from the OptiMOS™ series, rated for 100 V drain-source voltage and 42 A continuous drain current at the case. Gate charge of 25 nC at 10 V sets the switching-speed budget; the 1700 pF input capacitance at 50 V drain-source tells the gate-driver designer what output impedance they need for the target rise time. The part is housed in an 8-PowerTDFN (PG-TDSON-8-1) surface-mount package, a compact footprint with an exposed thermal pad that must be soldered to a copper plane for the 60 W power dissipation rating to hold.
No NRND or EOL notice is on record. The series is OptiMOS™, Infineon's mainstream trench MOSFET family for power conversion and load switching.
