Infineon OptiMOS™2 N-Channel Power MOSFET, 100 V Vdss, 15.2 mΩ Rds(on) @ 25 A, 10 V, 63 A continuous drain (Tc), PG-TDSON-8 package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | OptiMOS™2 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 9.4A (Ta), 63A (Tc) |
| Power dissipation | 114W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 4V @ 72µA |
| Rds on (Max) @ id, vgs | 15.2mOhm @ 25A, 10V |
| Gate charge (Qg) (Max) @ vgs | 29 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1900 pF @ 50 V |
On a bare PCB with still air, the ambient-temperature (Ta) rating of 9.4 A is the realistic limit. The 114 W power dissipation (Tc) tells you how much heat the die can shed if the thermal path is good.
The 150°C maximum junction means you can push the part hard in a hot enclosure as long as the thermal impedance is managed.
Infineon lists the BSC152N10NSFG as an active product. The part is ROHS3 compliant.
The BSC152N10NSFG is supplied in a PG-TDSON-8 package, which is a 8-lead PowerTDFN surface-mount package.