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Infineon Technologies BSC150N03LDGATMA1

BSC150N03LDGATMA1 - Infineon Technologies

MPNBSC150N03LDGATMA1
End of Life

MOSFET 2N-CH 30V 8A 8TDSON

$1.01Ref. price · indicative, final on quote
Packaging8-PowerVDFN
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BSC150N03LDGATMA1 specifications
ParameterValue
SeriesOptiMOS™
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C8A
Power - max26W
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
Case8-PowerVDFN
Vgs(th) (Max) @ id2.2V @ 250µA
Rds on (Max) @ id, vgs15mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs13.2nC @ 10V
Input capacitance (Ciss) (Max) @ vds1100pF @ 15V