Infineon OptiMOS™3, BSC150N03LD, Dual N-Channel MOSFET, 30V Vds, 8A Id, 15mOhm Rds(on) @ 10V, Logic Level Gate, PG-TDSON-8-4 package, -55°C to 150°C.
| Parameter | Value |
|---|---|
| Series | OptiMOS™3 |
| FET type | 2 N-Channel (Dual) |
| Mounting type | Surface Mount |
| Drain to source voltage | 30V |
| Current - continuous drain (Id) @ 25°C | 8A |
| Power - max | 26W |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| FET feature | Logic Level Gate |
| Case | 8-PowerVDFN |
| Vgs(th) (Max) @ id | 2.2V @ 250µA |
| Rds on (Max) @ id, vgs | 15mOhm @ 20A, 10V |
| Gate charge (Qg) (Max) @ vgs | 6.4nC @ 10V |
| Input capacitance (Ciss) (Max) @ vds | 1100pF @ 15V |
The BSC150N03LD: Maximum on-resistance is 15 mOhm at Vgs=10 V and Id=20 A, which keeps conduction losses low in a 30 V bus. Total gate charge is 6.4 nC at 10 V. Input capacitance is 1100 pF at Vds=15 V.
Yes — the dual N-channel configuration with a common drain and logic-level gate works well for battery-pack OR-ing or charge/discharge switching in a 2- to 4-series Li-ion stack (nominal 7.4 V to 14.8 V). The 30 V drain-source rating provides headroom for the pack voltage plus transients.