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Infineon Technologies BSC120N03LSGATMA1
Infineon Technologies

Infineon BSC120N03LSGATMA1 N-Channel MOSFET, 30V 12A/39A

MPNBSC120N03LSGATMA1
End of Life

Infineon OptiMOS N-Channel MOSFET, 30 V drain-source, 12 A (Ta) / 39 A (Tc) continuous drain, 12 mOhm Rds(on) at 10 V, PG-TDSON-8-5 package, -55°C to 150°C junction temperature.

$0.57Ref. price · indicative, final on quote
BSC120N03LSGATMA1 datasheet
Packaging8-PowerTDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BSC120N03LSGATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C12A (Ta), 39A (Tc)
Power dissipation2.5W (Ta), 28W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2.2V @ 250µA
Rds on (Max) @ id, vgs12mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs15 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1200 pF @ 15 V

Product details

30 V, 12 mOhm N-channel in a TDSON-8

The Infineon BSC120N03LSGATMA1 is an N-channel enhancement-mode MOSFET from the OptiMOS series, built on a metal-oxide trench technology. It handles a 30 V drain-to-source voltage.

Gate charge and switching

A maximum gate charge of 15 nC at 10 V means the gate driver does not need to push much current to switch the FET. This keeps the drive stage small and the switching losses manageable at moderate frequencies — typical for a 30 V rated part used in point-of-load regulators or low-voltage motor pre-drive stages. The input capacitance is 1200 pF at 15 V drain bias, which aligns with the moderate gate charge figure.

Thermal and temperature range

Rated for junction temperatures from -55°C to 150°C, this MOSFET suits environments where the board sees wide thermal swings.

Lifecycle and compliance

It is ROHS3 compliant, which covers the EU RoHS exemption list including lead in solder. No lead-free re-qualification is needed for designs already using this suffix.

Frequently asked questions

Is BSC120N03LSGATMA1 RoHS compliant?

Yes, it is ROHS3 compliant, covering the current EU RoHS exemption categories.

What is the lead time for Infineon BSC120N03LSGATMA1?

Lead time is confirmed at quote time against an RFQ. Because the part is active, lead time typically follows standard Infineon distribution channels — submit an RFQ for your target quantity and delivery window.