30 V, 12 mOhm N-channel in a TDSON-8
The Infineon BSC120N03LSGATMA1 is an N-channel enhancement-mode MOSFET from the OptiMOS series, built on a metal-oxide trench technology. It handles a 30 V drain-to-source voltage.
Gate charge and switching
This keeps the drive stage small and the switching losses manageable at moderate frequencies — typical for a 30 V rated part used in point-of-load regulators or low-voltage motor pre-drive stages. The input capacitance is 1200 pF at 15 V drain bias, which aligns with the moderate gate charge figure.
Thermal and temperature range
No lead-free re-qualification is needed for designs already using this suffix.
