30 V N-channel power MOSFET for low-voltage switching
The Infineon BSC119N03MSCG is a 30 V N-channel power MOSFET from the OptiMOS™3 series, built on a metal-oxide trench technology. It delivers a maximum continuous drain current of 39 A at the case (Tc) and 11 A at ambient (Ta), with a typical on-resistance of 11.9 mOhm at 10 V gate drive and 30 A. The PG-TDSON-8 package (8-PowerTDFN) includes an exposed pad for thermal management, supporting up to 28 W power dissipation at the case.
Input capacitance (Ciss) is 1500 pF at 15 V drain-source, giving a moderate gate-drive load that a standard gate-driver IC can handle without excessive peak current. The threshold voltage (Vgs(th)) maximum is 2 V at 250 µA, ensuring the device turns on cleanly with logic-level gate signals.
For volume production or urgent BOM fills, submit an RFQ to verify lead time and stock position.
