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Infineon Technologies BSC119N03MSCG
Infineon Technologies

Infineon BSC119N03MSCG N-Channel MOSFET, 30V, 11.9mOhm

MPNBSC119N03MSCG
End of Life

Infineon OptiMOS™3 N-Channel MOSFET, 30 V drain-source, 11.9 mOhm Rds(on) at 10 V, 39 A continuous drain (Tc), PG-TDSON-8 package, -55°C to 150°C junction temperature.

$0.25Ref. price · indicative, final on quote
BSC119N03MSCG datasheet
Packaging8-PowerTDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BSC119N03MSCG Technical Specifications
ParameterValue
SeriesOptiMOS™3
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C11A (Ta), 39A (Tc)
Power dissipation2.5W (Ta), 28W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs11.9mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs20 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1500 pF @ 15 V

Product details

30 V N-channel power MOSFET for low-voltage switching

The Infineon BSC119N03MSCG is a 30 V N-channel power MOSFET from the OptiMOS™3 series, built on a metal-oxide trench technology. It delivers a maximum continuous drain current of 39 A at the case (Tc) and 11 A at ambient (Ta), with a typical on-resistance of 11.9 mOhm at 10 V gate drive and 30 A. The PG-TDSON-8 package (8-PowerTDFN) includes an exposed pad for thermal management, supporting up to 28 W power dissipation at the case. The junction temperature range of -55°C to 150°C covers automotive under-hood and industrial environments without derating concerns.

Gate drive and switching characteristics

The BSC119N03MSCG is specified with a drive voltage range of 4.5 V to 10 V for achieving the rated Rds(on). At 10 V gate drive, the total gate charge (Qg) is 20 nC, which keeps switching losses manageable in medium-frequency converters up to a few hundred kHz. Input capacitance (Ciss) is 1500 pF at 15 V drain-source, giving a moderate gate-drive load that a standard gate-driver IC can handle without excessive peak current. The threshold voltage (Vgs(th)) maximum is 2 V at 250 µA, ensuring the device turns on cleanly with logic-level gate signals.

Lifecycle and sourcing

No end-of-life notice or last-time-buy schedule has been issued. For volume production or urgent BOM fills, submit an RFQ to verify lead time and stock position.

Frequently asked questions

Does BSC119N03MSCG have a drop-in replacement?

No direct drop-in replacement is listed in the official records. The IPD50R950CEAUMA1 is a different voltage class (500 V) and much higher Rds(on) (950 mOhm), so it is not a functional substitute for this 30 V low-Rds(on) MOSFET.

Where can I buy BSC119N03MSCG with immediate stock?

This part is sourced to order through independent distribution. Submit an RFQ for current availability and pricing — stock and lead time are confirmed at quote time.