Thermal and layout — the exposed-pad reality
The BSC118N10NSGATMA1: Maximum power dissipation is 114 W at case temperature.
It is ROHS3 compliant and part of Infineon's ongoing OptiMOS™ portfolio.
BSC118N10NSGATMA1 OptiMOS N-Ch MOSFET, 100 V, 11.8 mOhm
MPNBSC118N10NSGATMA1
End of Life
Infineon OptiMOS™ N-Channel MOSFET, 100 V Vdss, 11 A (Ta) / 71 A (Tc) continuous drain, 11.8 mOhm Rds(on) at 50 A, 10 V, 56 nC gate charge, 8-PowerTDFN (PG-TDSON-8-1), -55 to 150 °C.
$1.74Ref. price · indicative, final on quote
Packaging8-PowerTDFN
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 11A (Ta), 71A (Tc) |
| Power dissipation | 114W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 4V @ 70µA |
| Rds on (Max) @ id, vgs | 11.8mOhm @ 50A, 10V |
| Gate charge (Qg) (Max) @ vgs | 56 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3700 pF @ 50 V |
Product details
Frequently asked questions
What is the replacement for BSC118N10NSGATMA1?
There is no official successor or replacement listed for this active part. The OptiMOS™ series includes other 100 V N-channel devices in similar packages, but no direct pin-compatible alternate is specified by Infineon.
Does BSC118N10NSGATMA1 come in a tape and reel package?
Yes — it is available in Tape & Reel (TR) and Cut Tape (CT) options for surface-mount assembly.