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Infineon Technologies BSC109N10NS3GATMA1

BSC109N10NS3GATMA1 Infineon OptiMOS N-Ch 100V 63A MOSFET

MPNBSC109N10NS3GATMA1
End of Life

Infineon OptiMOS™ N-Channel MOSFET, 100 V, 63 A, 10.9 mOhm Rds(on) at 10 V, PG-TDSON-8-1 package, -55°C to 150°C junction temperature.

$1.62Ref. price · indicative, final on quote
Packaging8-PowerTDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BSC109N10NS3GATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C63A (Tc)
Power dissipation78W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id3.5V @ 45µA
Rds on (Max) @ id, vgs10.9mOhm @ 46A, 10V
Gate charge (Qg) (Max) @ vgs35 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2500 pF @ 50 V

Product details

100 V, 63 A N-channel in PG-TDSON-8-1 — the switching-loss and thermal budget

The BSC109N10NS3GATMA1: The part lives in an 8-PowerTDFN (PG-TDSON-8-1) surface-mount package with an exposed drain pad for thermal transfer to the board. The junction temperature range of -55 to 150 °C covers automotive under-hood and industrial environments.

Rds(on) at 10 V — the number that decides conduction loss

The 10.9 mOhm Rds(on) is specified at 10 V gate drive with 46 A drain current. That is the worst-case resistance a designer uses for I²R loss calculations at full load.

Gate charge and input capacitance — driver and switching-loss reality

35 nC gate charge at 10 V and 2500 pF input capacitance at 50 V Vds are the numbers a gate-driver designer uses to size the drive current and estimate switching times.

Active lifecycle — no LTB risk for new designs

The BSC109N10NS3GATMA1 carries an Active product status with ROHS3 compliance. No last-time-buy notice or end-of-life signal is present.

Mounting and thermal — the exposed pad matters

The PG-TDSON-8-1 package is an 8-lead PowerTDFN with a large exposed drain pad on the bottom. The pad must be soldered to a copper area on the PCB to reach the 78 W dissipation rating.

Frequently asked questions

What is the Rds(on) of BSC109N10NS3GATMA1?

The maximum Rds(on) is 10.9 mOhm at a drain current of 46 A with a 10 V gate drive. This is the worst-case on-resistance used for conduction-loss calculations in the power stage.

Is BSC109N10NS3GATMA1 RoHS compliant?

Yes, the part is ROHS3 compliant. It also meets the lead-free requirement — no lead content above the RoHS threshold.

What package does BSC109N10NS3GATMA1 come in?

The package is an 8-PowerTDFN, supplier device code PG-TDSON-8-1.