100 V, 90 A N-channel MOSFET in a compact TDSON-8 package
The Infineon BSC100N10NSFGATMA1 is an N-channel enhancement-mode MOSFET from the OptiMOS™ family, rated for 100 V drain-source voltage and 90 A continuous drain current at case temperature. The 10 mOhm maximum on-resistance at 10 V gate drive keeps conduction losses low in high-current paths such as synchronous rectification, motor-drive output stages, and DC-DC converters. The 8-PowerTDFN package (PG-TDSON-8-1) provides a compact footprint with an exposed pad for thermal transfer to the PCB.
Gate drive and switching characteristics
The device requires a 10 V gate drive to achieve the rated Rds(on); the gate threshold voltage is 4 V maximum at 110 µA drain current. Gate charge is 44 nC at 10 V, and input capacitance is 2900 pF at 50 V drain-source. These figures define the gate-driver current and switching loss budget — a 10 V gate-drive supply is assumed, and the driver must source and sink the 44 nC per cycle at the intended switching frequency.
Thermal and environmental ratings
Junction temperature range spans -55°C to 150°C, covering automotive under-hood and industrial enclosure environments. Maximum power dissipation is 156 W at case temperature. The part is ROHS3 compliant and carries an active lifecycle status — no end-of-life notice, no last-time-buy window to manage.