100 V, 90 A N-channel MOSFET in a compact TDSON-8 package
The Infineon BSC100N10NSFGATMA1 is an N-channel enhancement-mode MOSFET from the OptiMOS™ family, rated for 100 V drain-source voltage and 90 A continuous drain current at case temperature.
The device requires a 10 V gate drive to achieve the rated Rds(on); the gate threshold voltage is 4 V maximum at 110 µA drain current. Gate charge is 44 nC at 10 V, and input capacitance is 2900 pF at 50 V drain-source. These figures define the gate-driver current and switching loss budget — a 10 V gate-drive supply is assumed, and the driver must source and sink the 44 nC per cycle at the intended switching frequency.
Thermal and environmental ratings
Maximum power dissipation is 156 W at case temperature.