Infineon OptiMOS™ BSC094N06LS5ATMA1, N-Channel MOSFET, 60 V Vdss, 47 A Id, 9.4 mOhm Rds(on) at 10 V, 9.4 nC Qg, -55 to 150 °C, 8-PowerTDFN PG-TDSON-8-6.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 47A (Tc) |
| Power dissipation | 36W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 2.3V @ 14µA |
| Rds on (Max) @ id, vgs | 9.4mOhm @ 24A, 10V |
| Gate charge (Qg) (Max) @ vgs | 9.4 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 1300 pF @ 30 V |
The BSC094N06LS5ATMA1: The 9.4 nC gate charge at 4.5 V allows switching with a standard logic-level gate driver.
The 8-PowerTDFN package (PG-TDSON-8-6) has an exposed drain pad that must be soldered to the PCB copper pour. The maximum junction temperature is 150 °C.
For new designs the active status means no forced redesign risk from a pending EOL.
Yes, it is ROHS3 compliant per the manufacturer's status.
The maximum on-resistance is 9.4 mOhm at 24 A drain current and 10 V gate drive.