Active production — logic-level dual MOSFET for compact power stages
The Infineon BSC0924NDIATMA1 is an OptiMOS™ dual N-channel asymmetrical MOSFET in a PG-TISON-8 package, rated for 30 V drain-source and a continuous drain current of 17 A on one channel and 32 A on the other.
5 mOhm Rds(on) at 10 V — and a logic-level gate that switches from 4.5 V
The on-resistance is 5 mOhm maximum at 20 A drain current with 10 V gate drive, which is the benchmark for a 30 V dual MOSFET in this package class. Gate charge at 4.5 V is 10 nC maximum.
Asymmetrical channels — one pair, two current ratings
The 17 A / 32 A split tells you this is not a matched dual MOSFET. It is designed for a specific topology — typically a synchronous buck converter where the high-side switch sees lower average current than the low-side synchronous rectifier, or a load-switch pair where one channel handles the main rail and the other a lighter auxiliary rail. The total power dissipation is rated at 1 W maximum, which means the thermal management — the PCB copper area under the exposed pad of the PG-TISON-8 package — sets the real-world current limit, not the silicon alone.
PG-TISON-8 — what the layout engineer needs
The 8-PowerTDFN package (Infineon calls it PG-TISON-8) is a surface-mount, thermally enhanced package with an exposed die pad. The input capacitance is 1160 pF at 15 V drain-source, which is moderate — the gate drive does not need a pre-driver, but the layout should keep the gate-drive loop tight to avoid ringing. The operating junction temperature range is -55°C to 150°C, so it is suitable for industrial and automotive environments where the PCB sees wide thermal cycling.