Skip to main content
Infineon Technologies BSC0921NDIATMA1

BSC0921NDIATMA1 - Infineon Technologies

MPNBSC0921NDIATMA1
End of Life

MOSFET 2N-CH 30V 17A/31A TISON8

$1.68Ref. price · indicative, final on quote
Packaging8-PowerTDFN
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BSC0921NDIATMA1 specifications
ParameterValue
SeriesOptiMOS™
FET type2 N-Channel (Dual) Asymmetrical
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C17A, 31A
Power - max1W
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate, 4.5V Drive
Case8-PowerTDFN
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs5mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs8.9nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds1025pF @ 15V