Dual asymmetrical MOSFET for compact DC-DC stages
The Infineon BSC0910NDIATMA1 is a dual N-channel asymmetrical MOSFET from the OptiMOS™ series, housed in a PG-TISON-8 package. One channel is rated for 11 A continuous drain, the other for 31 A, letting a single device serve both the high-side and synchronous-rectifier positions in a buck converter without separate FETs. The 4.6 mOhm maximum Rds(on) at 25 A and 10 V keeps conduction losses low enough that a 1 W package limit still leaves thermal headroom in a 12 V input rail design.
Sourcing and lifecycle — active, no redesign pressure
ROHS3 compliance is confirmed, so the part clears EU and similar regulatory requirements without an exemption expiry. For a BOM line that needs dual-sourcing flexibility, the active status means you can qualify this part into a new design without worrying about a forced change mid-production.
What the key ratings mean for the BOM
Input capacitance of 4500 pF at 12 V is moderate for a dual FET in this Rds(on) class. The 6.6 nC gate charge at 4.5 V confirms that a standard MCU output can handle the switching losses at moderate frequencies. The asymmetrical current rating — 11 A on one channel, 31 A on the other — maps directly to a typical synchronous buck topology: the high-side FET sees lower average current (duty-cycle fraction) while the low-side synchronous FET carries the full load current during the off-time. Using a single package instead of two separate FETs saves PCB area and reduces the pick-and-place count by one.